chip silicon rectifier sfm1 1-m thru sfm16-m super fast recovery type features plastic package has underwrit ers laboratory flammability classificat ion 94v- o utiliz ing flame retardant epox y m olding compound. for surfac e mounted applications. ex ceeds environmental standar ds of mi l-s-19500 / 228 low leakage current . mechanical dat a case : mol ded plastic, jed ec sod 123 / mi ni sma termi nals : solder plated, solderable per mil-st d-750, method 2026 pol arity : indicated by c athode band mounting p osition : any weight : 0.04 gram (v) (v) (v) (v) (ns) ( o c) sfm11-m s1 50 35 50 sfm12-m s2 100 70 100 sfm13-m s3 150 105 150 SFM14-M s4 200 140 200 sfm15-m s5 300 210 300 sfm16-m s6 400 280 400 -55 to +150 operating temperature v rrm *1 v rms *2 v r *3 v f *4 t rr *5 symbols marking code 35 0.95 1.25 maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward rectified current ambient temperature = 50 o c i o 1.0 a forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i fsm 30 a v r = v rrm t a = 25 o c 5.0 ua v r = v rrm t a = 100 o c 100 ua thermal resistance junction to ambient r q ja 42 o c / w diode junction capacitance f=1mhz and applied 4vdc reverse voltage c j 10 pf storage temperature t stg -55 +150 o c reverse current i r *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage *5 reverse recovery time f o r m o s a m s 0.161(4.1) 0.146(3.7) 0.012(0.3) typ. 0.071(1.8) 0.055(1.4) 0.110(2.8) 0.094(2.4) 0.063(1.6) 0.055(1.4) 0.035(0.9) typ. 0.035(0.9) typ. dimensions in inches and (millimeters) sod-123
.4 .6 .8 1.0 1.2 1.4 .001 .01 .1 1.0 10 rating and characteristic curves (sfm11-m thru sfm16-m) fig.1-typical forward characteristics fig.5-typical junction capacit ance i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward volt age,(v) pulse width 300us 1% duty cycle (+) (+) 25vdc (approx.) ( ) ( ) pulse generator (note 2) oscilliscope (note 1) 1 non-inductive w notes: 1. rise time= 7ns max., input impedance= 1 megohm.22pf. 2. rise time= 10ns max., source impedance= 50 ohms. +0.5a 0 -0.25a -1.0a | || | | | | | 1cm set time base for 50 / 10ns / cm trr d.u.t. fig.3- test circuit diagram and reverse recovery time characteristics 10 noninductive 50 noninductive w w tj=25 c fig.2-typical forward current a v e r a g e f o r w a r d c u r r e n t , ( a ) 0.2 0.4 0.6 0.8 1.0 1.2 single phase half wave 60hz resistive or inductive load derating curve ambient temperature ( c) 1.6 1.8 sf m 15 -m ~s fm 16 -m s f m 1 1 -m ~ s f m 1 4 -m reverse voltage,(v) j u n c t i o n c a p a c i t a n c e , ( p f ) 70 60 50 40 30 20 10 0 .01 .05 .1 .5 1 5 10 50 100 0 25 50 75 100 125 150 175 0 fig.4-maximum non-repetitive forward surge current 6 0 12 18 24 30 number of cycles at 60hz 1 10 5 50 100 tj=25 c 8.3ms single half sine wave jedec method p e a k f o r w a r d s u r g e c u r r e n t , ( a )
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